Invention Grant
US08855156B2 DFB laser diode having a lateral coupling for large output power
有权
DFB激光二极管具有大的输出功率的横向耦合
- Patent Title: DFB laser diode having a lateral coupling for large output power
- Patent Title (中): DFB激光二极管具有大的输出功率的横向耦合
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Application No.: US13266831Application Date: 2010-05-05
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Publication No.: US08855156B2Publication Date: 2014-10-07
- Inventor: Johannes Bernhard Koeth , Wolfgang Zeller
- Applicant: Johannes Bernhard Koeth , Wolfgang Zeller
- Applicant Address: DE Gerbrunn
- Assignee: nanoplus GmbH Nanosystems and Technologies
- Current Assignee: nanoplus GmbH Nanosystems and Technologies
- Current Assignee Address: DE Gerbrunn
- Agency: Meyertons Hood Kivlin Kowert & Goetzel, P.C.
- Agent Jeffrey C. Hood
- Priority: DE102009019996 20090505
- International Application: PCT/EP2010/056096 WO 20100505
- International Announcement: WO2010/128077 WO 20101111
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/12 ; H01S5/10 ; H01S5/22 ; H01S5/20
Abstract:
The invention relates to a DFB laser diode having a lateral coupling, which comprises at least one semi-conductor substrate (10), at least one active layer (40) that is arranged on the semiconductor substrate, at least one ridge (70) that is arranged above the active layer (40), at least one periodic surface structure (110) that is arranged next to the ridge (70) above the active layer (40) and at least one wave guide layer (30, 50) comprising a thickness ≧1 μm that is arranged below and/or above the active layer.
Public/Granted literature
- US20120093187A1 DFB Laser Diode Having a Lateral Coupling for Large Output Power Public/Granted day:2012-04-19
Information query
