Invention Grant
- Patent Title: Surface emitting laser element
- Patent Title (中): 表面发射激光元件
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Application No.: US13413375Application Date: 2012-03-06
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Publication No.: US08855157B2Publication Date: 2014-10-07
- Inventor: Yu Higuchi
- Applicant: Yu Higuchi
- Applicant Address: JP Anan-shi
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan-shi
- Agency: Foley & Lardner LLP
- Priority: JP2011-050939 20110309
- Main IPC: H01S5/00
- IPC: H01S5/00 ; B82Y20/00 ; H01S5/042 ; H01S5/183 ; H01S5/343

Abstract:
Disclosed is a surface emitting laser element capable of reducing threshold current. A surface emitting laser element according to an embodiment includes a semiconductor portion having a first semiconductor layer and a second semiconductor layer, a first reflector disposed at the first semiconductor layer side of the semiconductor portion, and a second reflector disposed at the second semiconductor layer side of the semiconductor portion. Particularly includes a second electrode disposed between the second semiconductor layer and the second reflector and connected to the second semiconductor layer, a connecting electrode disposed laterally around the second reflector and connected to the second electrode, and a current confinement portion disposed between the second semiconductor layer and the connecting electrode and capable of reflecting light from the semiconductor portion.
Public/Granted literature
- US20120230360A1 SURFACE EMITTING LASER ELEMENT Public/Granted day:2012-09-13
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