Invention Grant
US08855401B2 Methods and systems involving measuring complex dimensions of silicon devices 有权
涉及测量硅器件复杂尺寸的方法和系统

Methods and systems involving measuring complex dimensions of silicon devices
Abstract:
A method for measuring a dimension of a device includes receiving an image of a portion of the device, receiving a first offset value and a second offset value, processing the image to define a least one graph of a line of pixels, the at least one graph including the brightness level of each pixel in a line of pixels, identifying a location of a first peak and a second peak in the graph, defining a first exclusion area boundary, defining a second exclusion area boundary, setting the brightness level of the pixels between the first exclusion area boundary and the second exclusion area boundary to zero, identifying a first portion of the feature of interest and a second portion of the feature of interest, and measuring a distance between the first portion of the feature of interest and the second portion of the feature of interest.
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