Invention Grant
- Patent Title: Memory device
- Patent Title (中): 内存设备
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Application No.: US13201699Application Date: 2010-02-16
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Publication No.: US08856426B2Publication Date: 2014-10-07
- Inventor: Mutsuhiro Ohmori
- Applicant: Mutsuhiro Ohmori
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Wolf, Greenfield & Sacks, P.C.
- Priority: JP2009-039037 20090223; JP2009-039039 20090223; JP2009-039043 20090223; JP2009-039054 20090223
- International Application: PCT/JP2010/052269 WO 20100216
- International Announcement: WO2010/095612 WO 20100826
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G11C16/22 ; G11C16/06

Abstract:
There is provided a memory device capable of stably storing recorded data over a long term of several decades or longer and capable of reliably reading stored data. A first circuit 200 and a second circuit 300 are separately implementable, and the first circuit 200 includes a data recording circuit 210 reading recorded data from an address appointed by an address signal when a read/write signal stays at a first level and writing data to the address appointed by the address signal when the read/write signal stays at a second level, and a write/read control circuit 230 performing data write/read control on the data recording circuit according to the address signal in response to a read or write instruction from the second circuit.
Public/Granted literature
- US20110302379A1 MEMORY DEVICE Public/Granted day:2011-12-08
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