Invention Grant
US08856428B2 Nonvolatile memory device and nonvolatile memory system and random data read method thereof
有权
非易失性存储器件和非易失性存储器系统及其随机数据读取方法
- Patent Title: Nonvolatile memory device and nonvolatile memory system and random data read method thereof
- Patent Title (中): 非易失性存储器件和非易失性存储器系统及其随机数据读取方法
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Application No.: US13450541Application Date: 2012-04-19
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Publication No.: US08856428B2Publication Date: 2014-10-07
- Inventor: Kijun Lee , Jaehong Kim , Sejin Lim , Jungsoo Chung
- Applicant: Kijun Lee , Jaehong Kim , Sejin Lim , Jungsoo Chung
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2011-0036350 20110419
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F13/00 ; G06F13/28 ; G06F11/10 ; G06F12/02 ; G11C7/10
Abstract:
A random data reading method of a nonvolatile memory device includes receiving an initial seed corresponding to a selected page of the nonvolatile memory device and relative location information of read-requested random data in the selected page. The method further includes generating a seed for randomizing the random data by subjecting the initial seed and the location information to a finite field arithmetic operation, and de-randomizing the random data based on a random sequence generated from the seed.
Public/Granted literature
- US20120272017A1 NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY SYSTEM AND RANDOM DATA READ METHOD THEREOF Public/Granted day:2012-10-25
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