Invention Grant
US08856621B2 Memory controller for nonvolatile memory device, memory system comprising memory controller, and related methods of operation
有权
用于非易失性存储器件的存储器控制器，包括存储器控制器的存储器系统以及相关的操作
- Patent Title: Memory controller for nonvolatile memory device, memory system comprising memory controller, and related methods of operation
- Patent Title (中): 用于非易失性存储器件的存储器控制器，包括存储器控制器的存储器系统以及相关的操作
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Application No.: US13606188Application Date: 2012-09-07
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Publication No.: US08856621B2Publication Date: 2014-10-07
- Inventor: Hee Seok Eun , Jae Hong Kim , Hyung Joon Park , Young Kwang Yoo
- Applicant: Hee Seok Eun , Jae Hong Kim , Hyung Joon Park , Young Kwang Yoo
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2011-0119020 20111115
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C11/34 ; G06F11/10
Abstract:
A nonvolatile memory device comprises a memory controller having a memory cell status estimator that generates status estimation information indicating the status of a memory cell based on status register data, a coupling group index selector configured to generate a select signal for selecting a page and coupling group index from the status estimation information, and a memory cell status value generator configured to map the status estimation information to the data reliability decision bits and the coupling group index and generate a status value of the memory cell for error correction code decoding.
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