Invention Grant
US08856698B1 Method and apparatus for providing metric relating two or more process parameters to yield 有权
用于提供涉及两个或多个工艺参数以产生的度量的方法和装置

Method and apparatus for providing metric relating two or more process parameters to yield
Abstract:
A process and apparatus are provided for generating and evaluating one or more metrics for analyzing the design and manufacture of semiconductor devices. Embodiments include scanning a drawn semiconductor design layout to determine a difficult-to-manufacture pattern within the drawn semiconductor design layout based on a match with a pre-characterized difficult-to-manufacture pattern determining a corrected pattern based on a pre-determined correlation between the corrected pattern and the pre-characterized difficult-to-manufacture pattern, and replacing the difficult-to-manufacture pattern with the corrected pattern within the drawn semiconductor design layout.
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