Invention Grant
US08856698B1 Method and apparatus for providing metric relating two or more process parameters to yield
有权
用于提供涉及两个或多个工艺参数以产生的度量的方法和装置
- Patent Title: Method and apparatus for providing metric relating two or more process parameters to yield
- Patent Title (中): 用于提供涉及两个或多个工艺参数以产生的度量的方法和装置
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Application No.: US13833104Application Date: 2013-03-15
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Publication No.: US08856698B1Publication Date: 2014-10-07
- Inventor: Azat Latypov
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GlobalFoundries Inc.
- Current Assignee: GlobalFoundries Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A process and apparatus are provided for generating and evaluating one or more metrics for analyzing the design and manufacture of semiconductor devices. Embodiments include scanning a drawn semiconductor design layout to determine a difficult-to-manufacture pattern within the drawn semiconductor design layout based on a match with a pre-characterized difficult-to-manufacture pattern determining a corrected pattern based on a pre-determined correlation between the corrected pattern and the pre-characterized difficult-to-manufacture pattern, and replacing the difficult-to-manufacture pattern with the corrected pattern within the drawn semiconductor design layout.
Public/Granted literature
- US20140282307A1 METHOD AND APPARATUS FOR PROVIDING METRIC RELATING TWO OR MORE PROCESS PARAMETERS TO YIELD Public/Granted day:2014-09-18
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