Invention Grant
- Patent Title: Semiconductor device feature density gradient verification
- Patent Title (中): 半导体器件特征密度梯度校验
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Application No.: US14012142Application Date: 2013-08-28
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Publication No.: US08856707B2Publication Date: 2014-10-07
- Inventor: Young-Chow Peng , Chung-Hui Chen , Chien-Hung Chen , Po-Zeng Kang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G03F1/36

Abstract:
A method for verifying that acceptable device feature gradients and device feature disparities are present in a semiconductor device layout, is provided. The method provides for dividing a device layout into a plurality of windows and measuring or otherwise determining the device feature density within each window. The device layout includes various device regions and the method provides for comparing an average device feature density within one region to surrounding areas or other regions and also for determining gradients of device feature densities. The gradients may be monitored from within a particular device region to surrounding regions. Instructions for carrying out the method may be stored on a computer readable storage medium and executed by a processor.
Public/Granted literature
- US20130346935A1 SEMICONDUCTOR DEVICE FEATURE DENSITY GRADIENT VERIFICATION Public/Granted day:2013-12-26
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