Invention Grant
US08859299B2 HPC workflow for rapid screening of materials and stacks for STT-RAM 有权
HPC工作流程,用于快速筛选STT-RAM的材料和堆叠

  • Patent Title: HPC workflow for rapid screening of materials and stacks for STT-RAM
  • Patent Title (中): HPC工作流程,用于快速筛选STT-RAM的材料和堆叠
  • Application No.: US13716396
    Application Date: 2012-12-17
  • Publication No.: US08859299B2
    Publication Date: 2014-10-14
  • Inventor: Imran Hashim
  • Applicant: Intermolecular, Inc.
  • Applicant Address: US CA San Jose
  • Assignee: Intermolecular, Inc.
  • Current Assignee: Intermolecular, Inc.
  • Current Assignee Address: US CA San Jose
  • Main IPC: H01L21/00
  • IPC: H01L21/00 H01L43/12
HPC workflow for rapid screening of materials and stacks for STT-RAM
Abstract:
In some embodiments, HPC techniques are applied to the screening and evaluating the materials, process parameters, process sequences, and post deposition treatment processes for the development of STT-RAM stacks. Simple test structures are employed for initial screening of basic materials properties of candidate materials for each layer within the stack. The use of multiple site-isolated regions on a single substrate allows many material and/or process conditions to be evaluated in a timely and cost effective manner. Interactions between the layers as well as interactions with the substrate can be investigated in a straightforward manner.
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