Invention Grant
US08859299B2 HPC workflow for rapid screening of materials and stacks for STT-RAM
有权
HPC工作流程,用于快速筛选STT-RAM的材料和堆叠
- Patent Title: HPC workflow for rapid screening of materials and stacks for STT-RAM
- Patent Title (中): HPC工作流程,用于快速筛选STT-RAM的材料和堆叠
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Application No.: US13716396Application Date: 2012-12-17
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Publication No.: US08859299B2Publication Date: 2014-10-14
- Inventor: Imran Hashim
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L43/12

Abstract:
In some embodiments, HPC techniques are applied to the screening and evaluating the materials, process parameters, process sequences, and post deposition treatment processes for the development of STT-RAM stacks. Simple test structures are employed for initial screening of basic materials properties of candidate materials for each layer within the stack. The use of multiple site-isolated regions on a single substrate allows many material and/or process conditions to be evaluated in a timely and cost effective manner. Interactions between the layers as well as interactions with the substrate can be investigated in a straightforward manner.
Public/Granted literature
- US20140170775A1 HPC Workflow for Rapid Screening of Materials and Stacks for STT-RAM Public/Granted day:2014-06-19
Information query
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