发明授权
- 专利标题: Method for making epitaxial structure
- 专利标题(中): 制造外延结构的方法
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申请号: US13713542申请日: 2012-12-13
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公开(公告)号: US08859402B2公开(公告)日: 2014-10-14
- 发明人: Yang Wei , Shou-Shan Fan
- 申请人: Tsinghua University , Hon Hai Precision Industry Co., Ltd.
- 申请人地址: CN Beijing TW New Taipei
- 专利权人: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- 当前专利权人: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- 当前专利权人地址: CN Beijing TW New Taipei
- 代理机构: Novak Druce Connolly Bove + Quigg LLP
- 优先权: CN201210122535 20120425
- 主分类号: H01L21/20
- IPC分类号: H01L21/20 ; H01L21/36 ; H01L21/02
摘要:
A method for making epitaxial structure is provided. The method includes providing a substrate having an epitaxial growth surface, patterning the epitaxial growth surface; placing a graphene layer on the patterned epitaxial growth surface, and epitaxially growing an epitaxial layer on the epitaxial growth surface. The graphene layer includes a number of apertures to expose a part of the patterned epitaxial growth surface. The epitaxial layer is grown from the exposed part of the patterned epitaxial growth surface and through the aperture.
公开/授权文献
- US20130288459A1 METHOD FOR MAKING EPITAXIAL STRUCTURE 公开/授权日:2013-10-31
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