Invention Grant
- Patent Title: Method of fabricating high efficiency CIGS solar cells
- Patent Title (中): 制造高效CIGS太阳能电池的方法
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Application No.: US13711860Application Date: 2012-12-12
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Publication No.: US08859405B2Publication Date: 2014-10-14
- Inventor: Haifan Liang , Sang Lee , Wei Liu , Sandeep Nijhawan , Jeroen Van Duren
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; H01L33/00 ; H01L31/18 ; H01L31/065
Abstract:
A method for fabricating high efficiency CIGS solar cells including the deposition of Ga concentrations (Ga/(Ga+In)=0.25−0.66) from sputtering targets containing Ga concentrations between about 25 atomic % and about 66 atomic %. Further, the method includes a high temperature selenization process integrated with a high temperature anneal process that results in high efficiency.
Public/Granted literature
- US20130309804A1 Method of Fabricating High Efficiency CIGS Solar Cells Public/Granted day:2013-11-21
Information query
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