发明授权
- 专利标题： ReRAM device structure
- 专利标题（中）： ReRAM器件结构
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申请号： US13442046申请日： 2012-04-09
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公开(公告)号： US08860001B2公开(公告)日： 2014-10-14
- 发明人: Cheong Min Hong , Ko-Min Chang , Feng Zhou
- 申请人： Cheong Min Hong , Ko-Min Chang , Feng Zhou
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 James L. Clingan, Jr.; Joanna G. Chiu
- 主分类号： H01L47/00
- IPC分类号： H01L47/00
摘要：
A resistive random access memory (ReRAM) includes a first metal layer having a first metal and a metal-oxide layer on the first metal layer. The metal-oxide layer inlcudes the first metal. The ReRAM further includes a second metal layer over the metal-oxide layer and a first continuous conductive barrier layer in physical contact with sidewalls of the first metal layer and of the metal-oxide layer.
公开/授权文献
- US20130264533A1 RERAM DEVICE STRUCTURE 公开/授权日：2013-10-10
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