发明授权
US08860156B2 Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM
有权
STT-MRAM具有垂直磁各向异性的最小厚度合成反铁磁（SAF）结构
- 专利标题： Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM
- 专利标题（中）： STT-MRAM具有垂直磁各向异性的最小厚度合成反铁磁（SAF）结构
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申请号： US13609780申请日： 2012-09-11
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公开(公告)号： US08860156B2公开(公告)日： 2014-10-14
- 发明人: Robert Beach , Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
- 申请人： Robert Beach , Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
- 申请人地址： US CA Milpitas
- 专利权人： Headway Technologies, Inc.
- 当前专利权人： Headway Technologies, Inc.
- 当前专利权人地址： US CA Milpitas
- 代理机构： Saile Ackerman LLC
- 代理商 Stephen B. Ackerman
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
A synthetic antiferromagnetic (SAF) structure for a spintronic device is disclosed and has an AP2/antiferromagnetic (AF) coupling/CoFeB configuration. The SAF structure is thinned to reduce the fringing (Ho) field while maintaining high coercivity. The AP2 reference layer has intrinsic perpendicular magnetic anisotropy (PMA) and induces PMA in a thin CoFeB layer through AF coupling. In one embodiment, AF coupling is improved by inserting a Co dusting layer on top and bottom surfaces of a Ru AF coupling layer. When AP2 is (Co/Ni)4, and CoFeB thickness is 7.5 Angstroms, Ho is reduced to 125 Oe, Hc is 1000 Oe, and a balanced saturation magnetization-thickness product (Mst)=0.99 is achieved. The SAF structure may also be represented as FL2/AF coupling/CoFeB where FL2 is a ferromagnetic layer with intrinsic PMA.