Invention Grant
- Patent Title: Preventing the cracking of passivation layers on ultra-thick metals
- Patent Title (中): 防止超厚金属上的钝化层破裂
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Application No.: US13035517Application Date: 2011-02-25
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Publication No.: US08860224B2Publication Date: 2014-10-14
- Inventor: Yu-Wen Chen , Chuang-Han Hsieh , Kun-Yu Lin , Kuan-Chi Tsai
- Applicant: Yu-Wen Chen , Chuang-Han Hsieh , Kun-Yu Lin , Kuan-Chi Tsai
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L23/48 ; H01L21/768 ; H01L23/528 ; H01L23/522
Abstract:
A device includes a top metal layer; a UTM line over the top metal layer and having a first thickness; and a passivation layer over the UTM line and having a second thickness. A ratio of the second thickness to the first thickness is less than about 0.33.
Public/Granted literature
- US20120217641A1 Preventing the Cracking of Passivation Layers on Ultra-Thick Metals Public/Granted day:2012-08-30
Information query
IPC分类:
