发明授权
US08861271B1 High reliability non-volatile static random access memory devices, methods and systems
有权
高可靠性非易失性静态随机存取存储器件，方法与系统
- 专利标题： High reliability non-volatile static random access memory devices, methods and systems
- 专利标题（中）： 高可靠性非易失性静态随机存取存储器件，方法与系统
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申请号： US13536661申请日： 2012-06-28
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公开(公告)号： US08861271B1公开(公告)日： 2014-10-14
- 发明人: Suhail Zain , Helmut Puchner , Walt Anderson , David Still
- 申请人： Suhail Zain , Helmut Puchner , Walt Anderson , David Still
- 申请人地址： US CA San Jose
- 专利权人： Cypress Semiconductor Corporation
- 当前专利权人： Cypress Semiconductor Corporation
- 当前专利权人地址： US CA San Jose
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
A device can include a plurality of memory cells, each memory cell including at least one latch circuit coupled between two data nodes, a first nonvolatile section coupled to a first data node, and a second nonvolatile section coupled to a second data node; and each nonvolatile section including at least one switch element in series with a programmable nonvolatile element, the switch element configured to couple the nonvolatile element to the corresponding data node during a high reliability read operation of the memory cell.
公开/授权文献
- US3230245A Recovery of alkyl borate from methanol-alkyl borate mixtures 公开/授权日：1966-01-18
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