发明授权
- 专利标题： Semiconductor storage device
- 专利标题（中）： 半导体存储设备
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申请号： US13605840申请日： 2012-09-06
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公开(公告)号： US08861279B2公开(公告)日： 2014-10-14
- 发明人: Tomoo Hishida , Yoshihisa Iwata
- 申请人： Tomoo Hishida , Yoshihisa Iwata
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Patterson & Sheridan, LLP
- 优先权： JPP2012-066236 20120322
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
A semiconductor storage device has a nonvolatile storage region, a voltage generating circuit that generates an operational voltage for the storage region, and a control circuit that sends the voltage generated by the voltage generating circuit to the storage region. The voltage generating circuit has a transistor, a first resistance element, a second resistance element, and a comparator. The first resistance element and the second resistance element have wiring structure for resistance. The resistance wiring in the wiring structure has the same line width as the finest line width in the wiring formed in the storage region.
公开/授权文献
- US20130250676A1 SEMICONDUCTOR STORAGE DEVICE 公开/授权日：2013-09-26
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