发明授权
US08861720B2 Tamper-resistant memory integrated circuit and encryption circuit using same
有权
防篡改存储器集成电路和加密电路使用相同
- 专利标题: Tamper-resistant memory integrated circuit and encryption circuit using same
- 专利标题(中): 防篡改存储器集成电路和加密电路使用相同
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申请号: US13812628申请日: 2010-07-28
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公开(公告)号: US08861720B2公开(公告)日: 2014-10-14
- 发明人: Takeshi Fujino
- 申请人: Takeshi Fujino
- 申请人地址: JP Kyoto
- 专利权人: The Ritsumeikan Trust
- 当前专利权人: The Ritsumeikan Trust
- 当前专利权人地址: JP Kyoto
- 代理机构: Wenderoth, Lind & Ponack, L.L.P.
- 国际申请: PCT/JP2010/062689 WO 20100728
- 国际公布: WO2012/014291 WO 20120202
- 主分类号: H04L9/06
- IPC分类号: H04L9/06 ; G11C7/12 ; H04L9/28 ; H04L9/00 ; G11C7/24 ; G11C8/08 ; G06F7/58
摘要:
An integrated memory circuit applies to an S-box of a cryptographic circuit. The integrated memory circuit includes a row decoder, a column decoder, and a sense amplifier composed of a domino-RSL circuit, wherein data reading and data writing from/to memory cells of a memory cell array are performed via two complementary bit lines, and the transition probability of a signal line is equalized by input of random-number data supplied from a random-number generating circuit using an arbiter circuit.
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