Invention Grant
US08865542B2 Embedded polysilicon resistor in integrated circuits formed by a replacement gate process
有权
通过替代栅极工艺形成的集成电路中的嵌入式多晶硅电阻
- Patent Title: Embedded polysilicon resistor in integrated circuits formed by a replacement gate process
- Patent Title (中): 通过替代栅极工艺形成的集成电路中的嵌入式多晶硅电阻
-
Application No.: US13736558Application Date: 2013-01-08
-
Publication No.: US08865542B2Publication Date: 2014-10-21
- Inventor: Kwan-Yong Lim , Ki-Don Lee , Stanley Seungchul Song
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frederick J. Telecky, Jr.
- Main IPC: H01L21/8244
- IPC: H01L21/8244 ; H01L27/06 ; H01L29/66

Abstract:
An embedded resistor structure in an integrated circuit that can be formed in a replacement gate high-k metal gate metal-oxide-semiconductor (MOS) technology process flow. The structure is formed by etching a trench into the substrate, either by removing a shallow trench isolation structure or by silicon etch at the desired location. Deposition of the dummy gate polysilicon layer fills the trench with polysilicon; the resistor polysilicon portion is protected from dummy gate polysilicon removal by a hard mask layer. The resistor polysilicon can be doped during source/drain implant, and can have its contact locations silicide-clad without degrading the metal gate electrode.
Public/Granted literature
- US20140183657A1 Embedded Polysilicon Resistor in Integrated Circuits Formed by a Replacement Gate Process Public/Granted day:2014-07-03
Information query
IPC分类: