Invention Grant
- Patent Title: Method of manufacturing polycrystalline silicon layer, and method of manufacturing transistor having the polycrystalline silicon layer
- Patent Title (中): 制造多晶硅层的方法以及制造具有多晶硅层的晶体管的方法
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Application No.: US13186974Application Date: 2011-07-20
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Publication No.: US08865578B2Publication Date: 2014-10-21
- Inventor: Young-Jin Chang , Jae-Hwan Oh , Won-Kyu Lee , Seong-Hyun Jin , Jae-Beom Choi
- Applicant: Young-Jin Chang , Jae-Hwan Oh , Won-Kyu Lee , Seong-Hyun Jin , Jae-Beom Choi
- Applicant Address: KR Yongin, Gyeonggi-Do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin, Gyeonggi-Do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2010-0071598 20100723
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L27/12 ; H01L21/02
Abstract:
An embodiment is directed to a method of manufacturing a polycrystalline silicon layer, the method including providing a crystallization substrate, the crystallization substrate having an amorphous silicon layer on a first substrate, providing a reflection substrate, the reflection substrate having a first region with a reflection panel therein and a second region without the reflection panel, disposing the crystallization substrate and the reflection substrate on one another, and selectively crystallizing the amorphous silicon layer by directing a laser beam onto the crystallization substrate and the reflection substrate, and reflecting the laser beam from the reflection panel.
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