发明授权
- 专利标题: Optoelectronic semiconductor chip
- 专利标题(中): 光电半导体芯片
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申请号: US13821554申请日: 2011-08-22
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公开(公告)号: US08866175B2公开(公告)日: 2014-10-21
- 发明人: Karl Engl , Markus Maute , Andreas Weimar , Lutz Hoeppel , Patrick Rode , Juergen Moosburger , Norwin von Malm
- 申请人: Karl Engl , Markus Maute , Andreas Weimar , Lutz Hoeppel , Patrick Rode , Juergen Moosburger , Norwin von Malm
- 申请人地址: DE Regensburg
- 专利权人: OSRAM Opto Semiconductors GmbH
- 当前专利权人: OSRAM Opto Semiconductors GmbH
- 当前专利权人地址: DE Regensburg
- 代理机构: Slater & Matsil, L.L.P.
- 优先权: DE102010045784 20100917
- 国际申请: PCT/EP2011/064386 WO 20110822
- 国际公布: WO2012/034828 WO 20120322
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L33/62 ; H01L33/38 ; H01L33/40 ; H01L33/44 ; H01L33/22 ; H01L33/20
摘要:
An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The mirror layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip.
公开/授权文献
- US20130228819A1 Optoelectronic Semiconductor Chip 公开/授权日:2013-09-05
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