发明授权
- 专利标题: Semiconductor structure and fabrication method thereof
- 专利标题(中): 半导体结构及其制造方法
-
申请号: US13167086申请日: 2011-06-23
-
公开(公告)号: US08866293B2公开(公告)日: 2014-10-21
- 发明人: Yi-Hung Lin , Meng-Tsung Lee , Sui-An Kao , Yi-Hsin Chen , Feng-Lung Chien
- 申请人: Yi-Hung Lin , Meng-Tsung Lee , Sui-An Kao , Yi-Hsin Chen , Feng-Lung Chien
- 申请人地址: TW Taichung
- 专利权人: Siliconware Precision Industries Co., Ltd.
- 当前专利权人: Siliconware Precision Industries Co., Ltd.
- 当前专利权人地址: TW Taichung
- 代理机构: Edwards Wildman Palmer LLP
- 代理商 Peter F. Corless; Steven M. Jensen
- 优先权: TW100115712A 20110505
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/00 ; H01L23/31
摘要:
A semiconductor structure includes a semiconductor chip having at least an electrode pad, a first metal layer formed on the electrode pad, a second metal layer completely formed on and in contact with the first metal layer, and a conductive pillar disposed on the second metal layer, where a material of the first metal layer is different from a material of the second metal layer, the first metal layer has a first distribution-projected area larger than a second distribution projected-area of the conductive pillar, and the second metal layer has a third distribution-projected area that is the same as the second distribution-projected area of the conductive pillar.
公开/授权文献
- US20120280384A1 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF 公开/授权日:2012-11-08
信息查询
IPC分类: