Invention Grant
- Patent Title: Backside processing of semiconductor devices
- Patent Title (中): 半导体器件的背面处理
-
Application No.: US13932851Application Date: 2013-07-01
-
Publication No.: US08866299B2Publication Date: 2014-10-21
- Inventor: Mark Harrison , Evelyn Napetschnig , Franz Stueckler
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00 ; H01L21/3065 ; H01L21/02 ; H01L21/683

Abstract:
A semiconductor device includes a workpiece having a bottom surface opposite the top surface. Metallization layers are disposed over the top surface and a protective layer is disposed over the metallization layers. The semiconductor device further includes a metal silicide layer disposed on the bottom surface. The metal silicide layer is less than about five atomic layers in thickness. A first metal layer is disposed over the metal silicide layer such that a metal of the first metal layer is the same as a metal of the metal silicide layer.
Public/Granted literature
- US20140015141A1 Backside Processing of Semiconductor Devices Public/Granted day:2014-01-16
Information query
IPC分类: