发明授权
- 专利标题: In-situ fabrication method for silicon solar cell
- 专利标题(中): 硅太阳能电池的原位制造方法
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申请号: US13699739申请日: 2010-09-08
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公开(公告)号: US08871618B2公开(公告)日: 2014-10-28
- 发明人: Yang Xia , Bangwu Liu , Chaobo Li , Jie Liu , Minggang Wang , Yongtao Li
- 申请人: Yang Xia , Bangwu Liu , Chaobo Li , Jie Liu , Minggang Wang , Yongtao Li
- 申请人地址: CN Beijing
- 专利权人: The Institute of Microelectronics of Chinese Academy of Sciences
- 当前专利权人: The Institute of Microelectronics of Chinese Academy of Sciences
- 当前专利权人地址: CN Beijing
- 代理商 Cheng-Ju Chiang
- 优先权: CN201010274489 20100907
- 国际申请: PCT/CN2010/076716 WO 20100908
- 国际公布: WO2012/031388 WO 20120315
- 主分类号: H01L21/26
- IPC分类号: H01L21/26 ; H01L31/18 ; C23C14/48 ; H01L21/223
摘要:
An in-situ fabrication method for a silicon solar cell includes the following steps: pretreating a silicon chip; placing the pretreated silicon chip in an implantation chamber of a plasma immersion ion implantation machine; completing the preparation of black silicon via a plasma immersion ion implantation process; making a PN junction and forming a passivation layer on the black silicon; after making the PN junction and forming the passivation layer, removing the black silicon from the plasma immersion ion implantation machine; preparing a metal back electrode on the back of the black silicon; preparing a metal grid on the passivation layer; obtaining a solar cell after encapsulation. Said method enables black silicon preparation, PN junction preparation, and passivation layer formation in-situ, greatly reducing the amount of equipment needed for the preparation of solar cells and the preparation cost. In addition, the method is simple and easy to control.
公开/授权文献
- US20130071965A1 In-Situ Fabrication Method for Silicon Solar Cell 公开/授权日:2013-03-21
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