发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US13598414申请日： 2012-08-29
-
公开(公告)号： US08872254B2公开(公告)日： 2014-10-28
- 发明人: Ki Hong Lee , Seung Ho Pyi , In Su Park
- 申请人： Ki Hong Lee , Seung Ho Pyi , In Su Park
- 申请人地址： KR Gyeonggi-do
- 专利权人： SK Hynix Inc.
- 当前专利权人： SK Hynix Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLP
- 优先权： KR10-2011-0101388 20111005
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L27/115
摘要：
A semiconductor device includes word lines and interlayer insulating layers alternately stacked, a channel layer penetrating the word lines and the interlayer insulating layers, a tunnel insulating layer surrounding the channel layer, and first charge trap layers surrounding the tunnel insulating layer, interposed between the word lines and the tunnel insulating layer, respectively, and doped with first impurities.
公开/授权文献
信息查询
IPC分类:
