发明授权
- 专利标题： Film stacks and methods thereof
- 专利标题（中）： 薄膜叠层及其方法
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申请号： US13640694申请日： 2010-04-19
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公开(公告)号： US08877646B2公开(公告)日： 2014-11-04
- 发明人: Valerie J Marty , Galen P. Cook
- 申请人： Valerie J Marty , Galen P. Cook
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 国际申请： PCT/US2010/031565 WO 20100419
- 国际公布： WO2011/133133 WO 20111027
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; B41J2/16
摘要：
A method of manufacturing a plurality of spacers in a film stack includes forming at least one electrically-conductive element having sidewalls on a substrate, depositing a plurality of passivation layers proximate to the substrate, and performing etching on one of the plurality of passivation layers to form a plurality of spacers substantially across from the sidewalls of the at least one electrically-conductive element.
公开/授权文献
- US20130034703A1 FILM STACKS AND METHODS THEREOF 公开/授权日：2013-02-07
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