发明授权
US08878161B2 Tunnel diodes incorporating strain-balanced, quantum-confined heterostructures
有权
掺杂应变平衡的量子限制异质结构的隧道二极管
- 专利标题： Tunnel diodes incorporating strain-balanced, quantum-confined heterostructures
- 专利标题（中）： 掺杂应变平衡的量子限制异质结构的隧道二极管
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申请号： US14198735申请日： 2014-03-06
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公开(公告)号： US08878161B2公开(公告)日： 2014-11-04
- 发明人: Matthew Lumb , Michael K. Yakes , María González , Christopher Bailey , Robert J. Walters
- 申请人： Matthew Lumb , Michael K. Yakes , María González , Christopher Bailey , Robert J. Walters
- 申请人地址： US DC Washington
- 专利权人： The United States of America, as represented by the Secretary of the Navy
- 当前专利权人： The United States of America, as represented by the Secretary of the Navy
- 当前专利权人地址： US DC Washington
- 代理机构： US Naval Research Laboratory
- 代理商 Joslyn Barritt
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/15
摘要：
A strain-balanced quantum well tunnel junction (SB-QWTJ) device. QW structures are formed from alternating quantum well and barrier layers situated between n++ and p++ layers in a tunnel junction formed on a substrate. The quantum well layers exhibit a compressive strain with respect to the substrate, while the barrier layers exhibit a tensile strain. The composition and layer thicknesses of the quantum well and barrier layers are configured so that the compressive and tensile strains in the structure are balanced.
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