Invention Grant
US08878161B2 Tunnel diodes incorporating strain-balanced, quantum-confined heterostructures
有权
掺杂应变平衡的量子限制异质结构的隧道二极管
- Patent Title: Tunnel diodes incorporating strain-balanced, quantum-confined heterostructures
- Patent Title (中): 掺杂应变平衡的量子限制异质结构的隧道二极管
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Application No.: US14198735Application Date: 2014-03-06
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Publication No.: US08878161B2Publication Date: 2014-11-04
- Inventor: Matthew Lumb , Michael K. Yakes , María González , Christopher Bailey , Robert J. Walters
- Applicant: Matthew Lumb , Michael K. Yakes , María González , Christopher Bailey , Robert J. Walters
- Applicant Address: US DC Washington
- Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee: The United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agency: US Naval Research Laboratory
- Agent Joslyn Barritt
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/15
Abstract:
A strain-balanced quantum well tunnel junction (SB-QWTJ) device. QW structures are formed from alternating quantum well and barrier layers situated between n++ and p++ layers in a tunnel junction formed on a substrate. The quantum well layers exhibit a compressive strain with respect to the substrate, while the barrier layers exhibit a tensile strain. The composition and layer thicknesses of the quantum well and barrier layers are configured so that the compressive and tensile strains in the structure are balanced.
Public/Granted literature
- US20140252312A1 Tunnel Diodes Incorporating Strain-Balanced, Quantum-Confined Heterostructures Public/Granted day:2014-09-11
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