发明授权
- 专利标题： Programmable SCR for LDMOS ESD protection
- 专利标题（中）： 用于LDMOS ESD保护的可编程SCR
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申请号： US13460523申请日： 2012-04-30
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公开(公告)号： US08878284B2公开(公告)日： 2014-11-04
- 发明人: Sameer Pendharkar , Suhail Murtaza , Juergen Wittmann
- 申请人： Sameer Pendharkar , Suhail Murtaza , Juergen Wittmann
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; Frederick J. Telecky, Jr.
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A protection circuit for a DMOS transistor comprises an anode circuit having a first heavily doped region of a first conductivity type (314) formed within and electrically connected to a first lightly doped region of the second conductivity type (310, 312). A cathode circuit having a plurality of third heavily doped regions of the first conductivity type (700) within a second heavily doped region of the second conductivity type (304). A first lead (202) is connected to each third heavily doped region (704) and connected to the second heavily doped region by at least three spaced apart connections (702) between every two third heavily doped regions. An SCR (400, 402) is connected between the anode circuit and the cathode circuit. The DMOS transistor has a drain (310, 312, 316) connected to the anode circuit and a source (304) connected to the cathode circuit.
公开/授权文献
- US20130285137A1 PROGRAMMABLE SCR FOR LDMOS ESD PROTECTION 公开/授权日：2013-10-31
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