Invention Grant
- Patent Title: Semiconductor device having DC structure
- Patent Title (中): 具有直流结构的半导体器件
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Application No.: US13767992Application Date: 2013-02-15
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Publication No.: US08878293B2Publication Date: 2014-11-04
- Inventor: Hyeon-Woo Jang , Won-Chul Lee , Jin-Won Jeong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2012-0037481 20120410
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L23/538 ; H01L27/088
Abstract:
A semiconductor device includes an interlayer insulating layer on a substrate, and a direct contact (DC) structure vertically penetrating the interlayer insulating layer and contacting the substrate, the DC structure including a DC hole exposing the substrate, an insulating DC spacer on an inner wall of the DC hole, and a conductive DC plug on the DC spacer and filling the DC hole, the DC plug including a lower DC plug and an upper DC plug on the lower DC plug, the lower DC plug having a smaller horizontal width than that of the upper DC plug.
Public/Granted literature
- US20130264638A1 SEMICONDUCTOR DEVICE HAVING DC STRUCTURE Public/Granted day:2013-10-10
Information query
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