发明授权
- 专利标题： DMOS transistor with a slanted super junction drift structure
- 专利标题（中）： 具有倾斜超结漂移结构的DMOS晶体管
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申请号： US13086187申请日： 2011-04-13
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公开(公告)号： US08878295B2公开(公告)日： 2014-11-04
- 发明人: Peter J. Hopper , Alexei Sadovnikov , William French , Erika Mazotti , Richard Wendell Foote, Jr. , Punit Bhola , Vladislav Vashchenko
- 申请人： Peter J. Hopper , Alexei Sadovnikov , William French , Erika Mazotti , Richard Wendell Foote, Jr. , Punit Bhola , Vladislav Vashchenko
- 申请人地址： US CA Santa Clara
- 专利权人： National Semiconductor Corporation
- 当前专利权人： National Semiconductor Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理商 Eugene C. Conser; Frederick J. Telecky, Jr.
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A DMOS transistor with a lower on-state drain-to-source resistance and a higher breakdown voltage utilizes a slanted super junction drift structure that lies along the side wall of an opening with the drain region at the bottom of the opening and the source region near the top of the opening.
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