Invention Grant
- Patent Title: Memory circuit and word line control circuit
- Patent Title (中): 存储电路和字线控制电路
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Application No.: US14020323Application Date: 2013-09-06
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Publication No.: US08879304B2Publication Date: 2014-11-04
- Inventor: Shih-Huang Huang
- Applicant: MediaTek Inc.
- Applicant Address: TW Hsin-Chu
- Assignee: MediaTek Inc.
- Current Assignee: MediaTek Inc.
- Current Assignee Address: TW Hsin-Chu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G11C11/419
- IPC: G11C11/419 ; G11C7/12 ; G11C11/418 ; G11C5/14 ; G11C8/08 ; G11C7/20

Abstract:
A word line control circuit includes a first PMOS transistor having a gate coupled to a first selection signal; a first NMOS transistor, coupled between a second node and a second voltage terminal, having a gate coupled to an inverted first selection signal, wherein the inverted first selection signal is obtained by inverting the first selection signal; and a plurality of word line drivers, at least one of the word line drivers comprising a first inverter and a second inverter, wherein a positive power terminal of the first inverter is coupled to the first voltage terminal, a negative power terminal of the first inverter is coupled to the second node, a positive power terminal of the second inverter is coupled to the first node, and a negative power terminal of the second inverter is coupled to the second voltage terminal.
Public/Granted literature
- US20140010002A1 MEMORY CIRCUIT AND WORD LINE CONTROL CIRCUIT Public/Granted day:2014-01-09
Information query
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