Invention Grant
US08879304B2 Memory circuit and word line control circuit 有权
存储电路和字线控制电路

Memory circuit and word line control circuit
Abstract:
A word line control circuit includes a first PMOS transistor having a gate coupled to a first selection signal; a first NMOS transistor, coupled between a second node and a second voltage terminal, having a gate coupled to an inverted first selection signal, wherein the inverted first selection signal is obtained by inverting the first selection signal; and a plurality of word line drivers, at least one of the word line drivers comprising a first inverter and a second inverter, wherein a positive power terminal of the first inverter is coupled to the first voltage terminal, a negative power terminal of the first inverter is coupled to the second node, a positive power terminal of the second inverter is coupled to the first node, and a negative power terminal of the second inverter is coupled to the second voltage terminal.
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