Invention Grant
US08879320B2 Method of programming multi-level cells in non-volatile memory device
有权
在非易失性存储器件中编程多级单元的方法
- Patent Title: Method of programming multi-level cells in non-volatile memory device
- Patent Title (中): 在非易失性存储器件中编程多级单元的方法
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Application No.: US13611598Application Date: 2012-09-12
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Publication No.: US08879320B2Publication Date: 2014-11-04
- Inventor: Chung-Hyun Lee , Ki-Hwan Choi
- Applicant: Chung-Hyun Lee , Ki-Hwan Choi
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2011-0126886 20111130
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A method of programming a multi-level cells (MLC) commonly coupled to a word line in a non-volatile memory device includes shadow-programming first MLC to a first shadow state, shadow-programming second MLC to a second shadow state less than the first shadow state, and then main-programming the first MLC from the first shadow state to a first final state and main-programming the second MLC from the second shadow state to the second final state less than the first final state.
Public/Granted literature
- US20130135929A1 METHOD OF PROGRAMMING MULTI-LEVEL CELLS IN NON-VOLATILE MEMORY DEVICE Public/Granted day:2013-05-30
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