发明授权
- 专利标题： Method of fabrication of a FinFET element
- 专利标题（中）： FinFET元件的制造方法
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申请号： US11831098申请日： 2007-07-31
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公开(公告)号： US08883597B2公开(公告)日： 2014-11-11
- 发明人: Cheng-Hung Chang , Chen-Hua Yu , Chen-Nan Yeh , Chu-Yun Fu , Yu-Rang Hsu , Ding-Yuan Chen
- 申请人： Cheng-Hung Chang , Chen-Hua Yu , Chen-Nan Yeh , Chu-Yun Fu , Yu-Rang Hsu , Ding-Yuan Chen
- 申请人地址： TW Hin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/8236
- IPC分类号： H01L21/8236 ; H01L21/8238 ; H01L29/78 ; H01L29/66
摘要：
The present disclosure provides a method of fabricating a FinFET element including providing a substrate including a first fin and a second fin. A first layer is formed on the first fin. The first layer comprises a dopant of a first type. A dopant of a second type is provided to the second fin. High temperature processing of the substrate is performed on the substrate including the formed first layer and the dopant of the second type.
公开/授权文献
- US20090035909A1 METHOD OF FABRICATION OF A FINFET ELEMENT 公开/授权日：2009-02-05
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