Invention Grant
US08885115B2 Semiconductor device wherein each of a first oxide semiconductor layer and a second oxide semiconductor layer includes a portion that is in an oxygen-excess state and is in contact with an insulating layer
有权
半导体装置,其中第一氧化物半导体层和第二氧化物半导体层中的每一个包括处于氧过剩状态并与绝缘层接触的部分
- Patent Title: Semiconductor device wherein each of a first oxide semiconductor layer and a second oxide semiconductor layer includes a portion that is in an oxygen-excess state and is in contact with an insulating layer
- Patent Title (中): 半导体装置,其中第一氧化物半导体层和第二氧化物半导体层中的每一个包括处于氧过剩状态并与绝缘层接触的部分
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Application No.: US14164713Application Date: 2014-01-27
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Publication No.: US08885115B2Publication Date: 2014-11-11
- Inventor: Shunpei Yamazaki , Junichiro Sakata , Masayuki Sakakura , Yoshiaki Oikawa , Kenichi Okazaki , Hotaka Maruyama , Masashi Tsubuku
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-185317 20090807; JP2009-206489 20090907
- Main IPC: G02F1/136
- IPC: G02F1/136 ; G02F1/1343 ; H01L27/12

Abstract:
An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.
Public/Granted literature
- US20140138681A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-05-22
Information query
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