发明授权
- 专利标题: Direct multi-level cell programming
- 专利标题(中): 直接多级单元编程
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申请号: US13598264申请日: 2012-08-29
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公开(公告)号: US08885410B2公开(公告)日: 2014-11-11
- 发明人: Alon Marcu , Eran Sharon , Idan Alrod , Yan Li , Hadas Oshinsky
- 申请人: Alon Marcu , Eran Sharon , Idan Alrod , Yan Li , Hadas Oshinsky
- 申请人地址: US TX Plano
- 专利权人: SanDisk Technologies Inc.
- 当前专利权人: SanDisk Technologies Inc.
- 当前专利权人地址: US TX Plano
- 代理机构: Toler Law Group, PC
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; G11C16/26
摘要:
A method is performed in a data storage device that includes a controller coupled to a non-volatile memory. The non-volatile memory includes a group of storage elements. Each storage element is configured to store multiple data bits. Data is sent from the controller to the non-volatile memory and first bits corresponding to a first portion of the data are stored into the group of storage elements during a first write stage. Each storage element of the group of storage elements stores at least one bit of the first bits upon completion of the first write stage. Second bits corresponding to a second portion of the data are sent to a second memory without sending the first bits to the second memory. The second bits are retrieved from the second memory and at least the second bits are stored into the group of storage elements during a second write stage.
公开/授权文献
- US20140063939A1 DIRECT MULTI-LEVEL CELL PROGRAMMING 公开/授权日:2014-03-06
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