发明授权
- 专利标题： Method for forming thin film utilizing sputtering target
- 专利标题（中）： 利用溅射靶形成薄膜的方法
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申请号： US13603484申请日： 2012-09-05
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公开(公告)号： US08889477B2公开(公告)日： 2014-11-18
- 发明人: Shunpei Yamazaki , Tetsunori Maruyama , Yuki Imoto , Hitomi Sato , Masahiro Watanabe , Mitsuo Mashiyama , Kenichi Okazaki , Motoki Nakashima , Takashi Shimazu
- 申请人： Shunpei Yamazaki , Tetsunori Maruyama , Yuki Imoto , Hitomi Sato , Masahiro Watanabe , Mitsuo Mashiyama , Kenichi Okazaki , Motoki Nakashima , Takashi Shimazu
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Fish & Richardson P.C.
- 优先权： JP2011-128750 20110608; JP2011-274954 20111215
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; C23C14/08 ; C23C14/34
摘要：
A semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.