MIM capacitors with improved reliability

Invention Grant

US08889507B2 MIM capacitors with improved reliability 有权

Title translation: MIM电容器具有更高的可靠性

Please log in to see more content

Patent Title: MIM capacitors with improved reliability
Patent Title (中): MIM电容器具有更高的可靠性
Application No.: US11765971

Application Date: 2007-06-20
Publication No.: US08889507B2

Publication Date: 2014-11-18
Inventor: Chih-Ta Wu , Jason Lee , Chung Chien Wang , Hsing-Lien Lin , Yu-Jen Wang , Yeur-Luen Tu , Chern-Yow Hsu , Yuan-Hung Liu , Chi-Hsin Lo , Chia-Shiung Tsai , Lucy Chang , Chia-Lin Chen , Ming-Chih Tsai
Applicant: Chih-Ta Wu , Jason Lee , Chung Chien Wang , Hsing-Lien Lin , Yu-Jen Wang , Yeur-Luen Tu , Chern-Yow Hsu , Yuan-Hung Liu , Chi-Hsin Lo , Chia-Shiung Tsai , Lucy Chang , Chia-Lin Chen , Ming-Chih Tsai
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Slater & Matsil, L.L.P.
Main IPC: H01L21/8234
IPC: H01L21/8234 ; H01L21/8244 ; H01L49/02 ; H01L27/108

MIM capacitors with improved reliability

Abstract:

A capacitor and methods for forming the same are provided. The method includes forming a bottom electrode; treating the bottom electrode in an oxygen-containing environment to convert a top layer of the bottom electrode into a buffer layer; forming an insulating layer on the buffer layer; and forming a top electrode over the insulating layer.

Abstract(Chinese):

提供电容器及其形成方法。该方法包括形成底部电极; 在含氧环境中处理底部电极以将底部电极的顶层转化为缓冲层; 在缓冲层上形成绝缘层; 并在所述绝缘层上形成顶部电极。

Public/Granted literature

US20080318378A1 MIM Capacitors with Improved Reliability Public/Granted day:2008-12-25

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺