发明授权
US08890183B2 III-Nitride light-emitting devices with reflective engineered growth templates and manufacturing method
有权
具有反射工程生长模板的III型氮化物发光器件及其制造方法
- 专利标题： III-Nitride light-emitting devices with reflective engineered growth templates and manufacturing method
- 专利标题（中）： 具有反射工程生长模板的III型氮化物发光器件及其制造方法
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申请号： US13597130申请日： 2012-08-28
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公开(公告)号： US08890183B2公开(公告)日： 2014-11-18
- 发明人: Robbie J. Jorgenson
- 申请人： Robbie J. Jorgenson
- 申请人地址： US CA Encinitas
- 专利权人： Lightwave Photonics, Inc.
- 当前专利权人： Lightwave Photonics, Inc.
- 当前专利权人地址： US CA Encinitas
- 代理机构： Lemaire Patent Law Firm, P.L.L.C.
- 代理商 Jonathan M. Rixen; Charles A. Lemaire
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L33/10 ; H01L33/32 ; H01L33/60 ; H01L33/46 ; H01L33/40
摘要：
A light emitter includes a first mirror that is an epitaxially grown metal mirror, a second mirror, and an active region that is epitaxially grown such that the active region is positioned at or close to, at least, one antinode between the first mirror and the second mirror.
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