发明授权
- 专利标题: Light emitting diodes and methods of fabricating the same
- 专利标题(中): 发光二极管及其制造方法
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申请号: US13830148申请日: 2013-03-14
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公开(公告)号: US08890197B2公开(公告)日: 2014-11-18
- 发明人: Doo Hyeb Youn , Choon Gi Choi , Kwang Hyo Chung
- 申请人: Electronics and Telecommunications Research Institute
- 申请人地址: KR Daejeon
- 专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人: Electronics and Telecommunications Research Institute
- 当前专利权人地址: KR Daejeon
- 优先权: KR10-2012-0125488 20121107
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L33/08 ; H01L33/48
摘要:
Provided is a light emitting diode, including a sub-mount structure including a first substrate and electrode portions provided on the first substrate, and a light emitting structure mounted on the sub-mount structure to include a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer. The electrode portions may include a first electrode portion and a second electrode portion connected to the first and second semiconductor layers, respectively, and each of the first and second electrode portions may include a first metal layer, a graphene layer, and a second metal layer sequentially provided on the first substrate.
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