Invention Grant
- Patent Title: Light emitting diodes and methods of fabricating the same
- Patent Title (中): 发光二极管及其制造方法
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Application No.: US13830148Application Date: 2013-03-14
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Publication No.: US08890197B2Publication Date: 2014-11-18
- Inventor: Doo Hyeb Youn , Choon Gi Choi , Kwang Hyo Chung
- Applicant: Electronics and Telecommunications Research Institute
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Priority: KR10-2012-0125488 20121107
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/08 ; H01L33/48

Abstract:
Provided is a light emitting diode, including a sub-mount structure including a first substrate and electrode portions provided on the first substrate, and a light emitting structure mounted on the sub-mount structure to include a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer. The electrode portions may include a first electrode portion and a second electrode portion connected to the first and second semiconductor layers, respectively, and each of the first and second electrode portions may include a first metal layer, a graphene layer, and a second metal layer sequentially provided on the first substrate.
Public/Granted literature
- US20140124799A1 LIGHT EMITTING DIODES AND METHODS OF FABRICATING THE SAME Public/Granted day:2014-05-08
Information query
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