发明授权
- 专利标题： Bi-directional ESD protection circuit
- 专利标题（中）： 双向ESD保护电路
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申请号： US10926916申请日： 2004-08-26
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公开(公告)号： US08890248B2公开(公告)日： 2014-11-18
- 发明人: Timothy Patrick Pauletti , Sameer Pendharkar , Wayne Tien-Feng Chen , Jonathan Brodsky , Robert Steinhoff
- 申请人： Timothy Patrick Pauletti , Sameer Pendharkar , Wayne Tien-Feng Chen , Jonathan Brodsky , Robert Steinhoff
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporation
- 当前专利权人： Texas Instruments Incorporation
- 当前专利权人地址： US TX Dallas
- 代理商 Willaim B. Kempler; Frederick J. Telecky, Jr.
- 主分类号： H01L23/62
- IPC分类号： H01L23/62 ; H01L29/74 ; H01L27/02 ; H01L29/87 ; H01L29/749
摘要：
An electrostatic discharge (ESD) device for protecting an input/output terminal of a circuit, the device comprising a first transistor with an integrated silicon-controlled rectifier (SCR) coupled between the input/output (I/O) terminal of the circuit and a node and a second transistor with an integrated silicon-controlled rectifier coupled between the node and a negative terminal of a supply voltage, wherein the silicon-controlled rectifier of the first transistor triggers in response to a negative ESD voltage and the silicon-controlled rectifier of the second transistor triggers in response to a positive ESD voltage.
公开/授权文献
- US20060043487A1 Bi-directional ESD protection circuit 公开/授权日：2006-03-02
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