发明授权
- 专利标题： Semiconductor device and method of forming the same
- 专利标题（中）： 半导体器件及其形成方法
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申请号： US13693954申请日： 2012-12-04
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公开(公告)号： US08890258B2公开(公告)日： 2014-11-18
- 发明人: Tsan-Chun Wang , Ziwei Fang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater and Matsil, L.L.P.
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L27/092 ; H01L21/8238 ; H01L29/78 ; H01L29/66
摘要：
A method of forming a semiconductor device includes forming a NMOS gate structure over a substrate. The method further includes forming an amorphized region in the substrate adjacent to the NMOS gate structure. The method also includes forming a lightly doped source/drain (LDD) region in the amorphized region. The method further includes depositing a stress film over the NMOS gate structure, performing an annealing process, and removing the stress film.
公开/授权文献
- US20140151762A1 Semiconductor Device and Method of Forming the Same 公开/授权日：2014-06-05
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