发明授权
- 专利标题: Graphite and/or graphene semiconductor devices
- 专利标题(中): 石墨和/或石墨烯半导体器件
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申请号: US13577964申请日: 2011-03-14
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公开(公告)号: US08890277B2公开(公告)日: 2014-11-18
- 发明人: Arthur Foster Hebard , Sefaattin Tongay
- 申请人: Arthur Foster Hebard , Sefaattin Tongay
- 申请人地址: US FL Gainesville
- 专利权人: University of Florida Research Foundation Inc.
- 当前专利权人: University of Florida Research Foundation Inc.
- 当前专利权人地址: US FL Gainesville
- 代理机构: Thomas | Horstemeyer, LLP.
- 国际申请: PCT/US2011/028319 WO 20110314
- 国际公布: WO2011/115891 WO 20110922
- 主分类号: H01L29/47
- IPC分类号: H01L29/47 ; H01L29/812 ; H01L29/778 ; H01L29/872 ; H01L29/16 ; H01L29/20
摘要:
Various embodiments are provided for graphite and/or graphene based semiconductor devices. In one embodiment, a semiconductor device includes a semiconductor layer and a semimetal stack. In another embodiment, the semiconductor device includes a semiconductor layer and a zero gap semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the semiconductor layer, which forms a Schottky barrier. In another embodiment, a semiconductor device includes first and second semiconductor layers and a semimetal stack. In another embodiment, a semiconductor device includes first and second semiconductor layers and a zero gap semiconductor layer. The first semiconductor layer includes a first semiconducting material and the second semi conductor layer includes a second semiconducting material formed on the first semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the second semiconductor layer, which forms a Schottky barrier.
公开/授权文献
- US20130001516A1 GRAPHITE AND/OR GRAPHENE SEMICONDUCTOR DEVICES 公开/授权日:2013-01-03
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