发明授权
- 专利标题: Semiconductor device and light-emitting device
- 专利标题(中): 半导体器件和发光器件
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申请号: US13464969申请日: 2012-05-05
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公开(公告)号: US08890407B2公开(公告)日: 2014-11-18
- 发明人: Hiroko Abe , Satoshi Seo , Shunpei Yamazaki
- 申请人: Hiroko Abe , Satoshi Seo , Shunpei Yamazaki
- 申请人地址: JP
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Husch Blackwell LLP
- 优先权: JP2004-318703 20041102
- 主分类号: H05B33/00
- IPC分类号: H05B33/00 ; H01L33/26 ; H01L33/08 ; H01L33/40 ; G09G3/32 ; H01L27/12 ; G09G3/20
摘要:
One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, a part of the electrode is exposed by the opening portion of the partition layer. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element and a transistor. The electrode and the transistor are connected electrically to each other. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, the second layer is exposed by the opening portion of the partition layer.
公开/授权文献
- US20120273776A1 Semiconductor Device and Light-Emitting Device 公开/授权日:2012-11-01
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