A driving circuit for driving an insulated gate semiconductor device based on a voltage of an externally-inputted gate signal, where the insulated gate semiconductor device has a source, a drain and a gate, and a parasitic capacitor exists between the drain and the gate. The driving circuit includes a gate voltage controlling semiconductor device disposed between, and connecting, the gate and the source of the insulated gate semiconductor device. The gate voltage controlling semiconductor device has a source and a gate, and is driven by a current charging the parasitic capacitor. The driving circuit also includes a pull-up device disposed between, and connecting, the source and the drain of the gate voltage controlling semiconductor device.