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US08891273B2 Pseudo-NOR cell for ternary content addressable memory 有权
用于三进制内容可寻址存储器的伪NOR单元

Pseudo-NOR cell for ternary content addressable memory
Abstract:
A method within a ternary content addressable memory (TCAM) includes receiving a match line output from a previous TCAM stage at a gate of a pull-up transistor of a current TCAM stage and at a gate of a pull-down transistor of the current TCAM stage. The method sets a match line bar at the current TCAM stage to a low value, via the pull-down transistor, when the match line output from the previous TCAM stage indicates a mismatch. The method also sets the match line bar at the current TCAM stage to a high value, via the pull-up transistor, when the match line output from the previous TCAM stage indicates a match.
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