Invention Grant
- Patent Title: Pseudo-NOR cell for ternary content addressable memory
- Patent Title (中): 用于三进制内容可寻址存储器的伪NOR单元
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Application No.: US13727494Application Date: 2012-12-26
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Publication No.: US08891273B2Publication Date: 2014-11-18
- Inventor: Rakesh Vattikonda , Nishith Desai , Changho Jung
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Paul S. Holdaway
- Main IPC: G11C15/00
- IPC: G11C15/00 ; G11C15/04

Abstract:
A method within a ternary content addressable memory (TCAM) includes receiving a match line output from a previous TCAM stage at a gate of a pull-up transistor of a current TCAM stage and at a gate of a pull-down transistor of the current TCAM stage. The method sets a match line bar at the current TCAM stage to a low value, via the pull-down transistor, when the match line output from the previous TCAM stage indicates a mismatch. The method also sets the match line bar at the current TCAM stage to a high value, via the pull-up transistor, when the match line output from the previous TCAM stage indicates a match.
Public/Granted literature
- US20140177310A1 PSEUDO-NOR CELL FOR TERNARY CONTENT ADDRESSABLE MEMORY Public/Granted day:2014-06-26
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