发明授权
US08891316B2 Nonvolatile memory devices including notched word lines 有权
非易失性存储器件包括缺口字线

Nonvolatile memory devices including notched word lines
摘要:
Nonvolatile memory devices can include a floating gate on a substrate, with a first tunnel insulating film therebetween. A memory gate can be on the floating gate, with a blocking insulating film therebetween. A word line can be located at a first side of both the memory gate and the floating gate, with a second tunnel insulating film therebetween. The first side of the floating gate can protrude beyond the first side of the memory gate toward the word line.
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