发明授权
- 专利标题: Nonvolatile memory devices including notched word lines
- 专利标题(中): 非易失性存储器件包括缺口字线
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申请号: US13428965申请日: 2012-03-23
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公开(公告)号: US08891316B2公开(公告)日: 2014-11-18
- 发明人: Boyoung Seo , Yongkyu Lee , Hyucksoo Yang , Yongtae Kim , Byungsup Shim
- 申请人: Boyoung Seo , Yongkyu Lee , Hyucksoo Yang , Yongtae Kim , Byungsup Shim
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec, P.A.
- 优先权: KR10-2011-0026567 20110324
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; H01L29/423 ; H01L29/788 ; H01L27/115 ; H01L21/28
摘要:
Nonvolatile memory devices can include a floating gate on a substrate, with a first tunnel insulating film therebetween. A memory gate can be on the floating gate, with a blocking insulating film therebetween. A word line can be located at a first side of both the memory gate and the floating gate, with a second tunnel insulating film therebetween. The first side of the floating gate can protrude beyond the first side of the memory gate toward the word line.
公开/授权文献
- US20120243339A1 NONVOLATILE MEMORY DEVICES INCLUDING NOTCHED WORD LINES 公开/授权日:2012-09-27
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