Invention Grant
- Patent Title: System and method for lithography simulation
- Patent Title (中): 光刻模拟系统和方法
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Application No.: US13971381Application Date: 2013-08-20
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Publication No.: US08893067B2Publication Date: 2014-11-18
- Inventor: Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
- Applicant: ASML Netherlands B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G06F19/00 ; G21K5/00 ; G03F1/00 ; G03F7/20

Abstract:
In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.
Public/Granted literature
- US20130332894A1 SYSTEM AND METHOD FOR LITHOGRAPHY SIMULATION Public/Granted day:2013-12-12
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