发明授权
US08894774B2 Composition and method to remove excess material during manufacturing of semiconductor devices
有权
在制造半导体器件期间去除多余材料的组合物和方法
- 专利标题： Composition and method to remove excess material during manufacturing of semiconductor devices
- 专利标题（中）： 在制造半导体器件期间去除多余材料的组合物和方法
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申请号： US13094967申请日： 2011-04-27
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公开(公告)号： US08894774B2公开(公告)日： 2014-11-25
- 发明人: Anh Duong
- 申请人： Anh Duong
- 申请人地址： US CA San Jose
- 专利权人： Intermolecular, Inc.
- 当前专利权人： Intermolecular, Inc.
- 当前专利权人地址： US CA San Jose
- 主分类号： C11D7/32
- IPC分类号： C11D7/32 ; C11D7/26 ; C11D7/34 ; C11D7/50 ; H01L21/285 ; H01L21/02
摘要：
A composition of matter and method to remove excess material during the manufacturing of semiconductor devices includes providing a substrate; applying a metal chelator mixture to the substrate, where the metal chelator mixture comprising a metal chelator and a solvent, where the metal chelator binds to the platinum residue, to render the platinum residue soluble; and rinsing the metal chelator mixture from the substrate to remove the platinum residue from the silicide.