Invention Grant
- Patent Title: Immersion lithography watermark reduction
- Patent Title (中): 浸没光刻水印缩减
-
Application No.: US13760306Application Date: 2013-02-06
-
Publication No.: US08895234B2Publication Date: 2014-11-25
- Inventor: Ching-Yu Chang , Vincent Yu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/26
- IPC: G03F7/26

Abstract:
Provided is a method of performing a lithography process. The method includes: exposing, through an immersion lithography process, a photo-sensitive material on a substrate, the immersion lithography process using a fluid for the exposing; thereafter treating the photo-sensitive material with a solution to neutralize quenchers that have diffused into the photo-sensitive material through the liquid, wherein the solution contains a substance that diffuses into the photo-sensitive material at a first rate that is dependent on a second at which the quenchers diffuse into the photo-sensitive material; thereafter removing a portion of the photo-sensitive material; thereafter performing a post-exposure bake to the photo-sensitive material; and developing the photo-sensitive material.
Public/Granted literature
- US20130309611A1 Immersion Lithography Watermark Reduction Public/Granted day:2013-11-21
Information query
IPC分类: